2N4124 0.2 a, 30 v npn plastic encapsulated transistor elektronische bauelemente 29-dec-2010 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? high dc current gain ? high transition frequency absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 30 v collector to emitter voltage v ceo 25 v emitter to base voltage v ebo 5 v collector current - continuous i c 0.2 a collector power dissipation p c 350 mw thermal resistance junction to ambient r ja 357 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo 30 - - v i c = 0.01ma, i e = 0a collector to emitter breakdown voltage v (br)ceo 25 - - v i c =1ma, i b = 0a emitter to base br eakdown voltage v (br)ebo 5 - - v i e = 0.01ma, i c = 0a collector cut-off current i cbo - - 50 na v cb = 20v, i e = 0 a emitter cut-off current i ebo - - 50 na v eb = 3v, i c = 0 ma dc current gain h fe (1) 120 - 360 v ce = 1v, i c = 2 ma h fe (2) 60 - - v ce = 1v, i c =50ma collector to emitter saturation voltage v ce(sat) - - 0.3 v i c =50ma, i b =5ma base to emitter sa turation voltage v be(sat) - - 0.95 v i c =50ma, i b =5ma collector output capacitance c ob - - 4 pf v cb = 5v, i e = 0a, f=1mhz transition frequency f t 300 - - mhz v ce = 20v, i c = 10ma, f=100mhz ? emitte r ? base ? collector to-92 ref. millimete r min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76 a c e k f d b g h j
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